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| MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H * * * * * IC Collector current ........................ 500A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93 10 18.5 M4 BX 9 10 10 E 25 27 26.5 6.5 BX M6 E B C E 8 62 48 B 9 16 C 16 25 13.5 9 37.5 28 107 E 4.5 32.2 24.5 7 13 LABEL 35 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 500 500 1780 10 5000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 640 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=500A, IB=0.67A -IC=500A (diode forward voltage) IC=500A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=500A, IB1=1A, -IB2=10A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 5.0 5.0 500 2.5 3.5 1.8 -- 3.0 10 3.5 0.07 0.25 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 1000 Tj=25C 800 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 10 0 2 3 45 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=2.5V COLLECTOR CURRENT IC (A) 600 IB=2A IB=1A IB=0.5A A IB=200m 400 200 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 2.4 2.6 2.8 3.0 3.2 3.4 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 IB=0.67A Tj=25C Tj=125C Tj=25C VCE=2.5V BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 10 0 7 5 VCE(sat) 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 10 1 7 5 4 3 2 10 0 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 4 IC=500A 3 SWITCHING TIME ton, ts, tf (s) ts 2 ton VCC=300V IB1=1A -IB2=10A Tj=25C Tj=125C 2 3 4 5 7 10 3 IC=300A IC=100A Tj=25C Tj=125C 1 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 10 -1 10 1 tf 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 COLLECTOR CURRENT IC (A) 10 1 7 5 4 3 2 tf 10 0 VCC=300V 7 IC=500A 5 IB1=1A 4 Tj=25C 3 Tj=125C 2 10 0 2 3 4 5 7 10 1 ts, tf (s) ts REVERSE BIAS SAFE OPERATING AREA 1600 Tj=125C 1400 1200 1000 IB2=-3A 800 600 -10A 400 200 0 0 100 200 300 400 500 600 700 800 VCE (V) SWITCHING TIME 2 3 4 5 7 10 2 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 TC =25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 10 D. C. 1m m s s 50s 100s SECOND BREAKDOWN AREA COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.1 0.08 Zth (j-c) (C/ W) 200 ms COLLECTOR DISSIPATION 0 20 40 60 80 100 120 140 160 TC (C) CASE TEMPERATURE 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.06 0.04 0.02 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s) 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 5000 4000 3000 2000 1000 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 0.25 0.20 Zth (j-c) (C/ W) 0.15 0.10 0.05 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 |
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